International Research journal of Management Science and Technology

  ISSN 2250 - 1959 (online) ISSN 2348 - 9367 (Print) New DOI : 10.32804/IRJMST

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STUDY OF THE EMITTER CHARACTERISTICS (IE – VE) OF UJT AT DIFFERENT TEMPERATURES

    1 Author(s):  RAVINDRAPAL M JOSHI

Vol -  5, Issue- 5 ,         Page(s) : 224 - 227  (2014 ) DOI : https://doi.org/10.32804/IRJMST

Abstract

The UniJunction transistor is a very popular semiconductor device which finds applications in a number of electronic circuits like oscillators, triggering circuits, etc. In the present paper, the effect of temperature on IE – VE characteristics for different values of VBB is studied.

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  1. Aldrich R Lesk I 1954 The Double base Diode: A Semiconductor Thyratron Analog IEEE Trans Electron Devices 1 24-27
  2. Lesk I 1953 US Patent 2769926 Non-linear Resistance Device filed 9th March 1953 patented 6th November 1956
  3. http://semiconductormuseum.com/PhotoGallery/PhotoGallery_2N43.htm Ward 2005 an Oral History of  Bill Gutzwiller
  4. http://www.semiconductormuseum.com/Transistors/GE/OralHistories/Gutzwiller/GutzwillerIndex.htm Ward 2005 an Oral History of Jerry Suran

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